Busbar design considerations for high power IGBT converters

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dc.contributor.authorBeukes H.J.
dc.contributor.authorEnslin J.H.R.
dc.contributor.authorSpee R.
dc.date.accessioned2011-05-15T16:00:10Z
dc.date.available2011-05-15T16:00:10Z
dc.date.issued1997
dc.description.abstractThis paper addresses an important issue in the design and synthesis of high power IGBT converters, i.e. the layout and design of connection busbars. Parasitic inductance, caused by the physical distance current has to flow from the storage capacitors to the static switches and back, is the major constraint in developing a bus structure. This leads to non-ideal converter operation, namely voltage overshoot, voltage drop and resonance with snubber capacitors. By analyzing the currents and fields in and around busbars, parasitic inductance can be predicted and limited.
dc.description.versionConference Paper
dc.identifier.citationPESC Record - IEEE Annual Power Electronics Specialists Conference
dc.identifier.citation2
dc.identifier.issn2759306
dc.identifier.urihttp://hdl.handle.net/10019.1/11559
dc.subjectBipolar transistors
dc.subjectBusbars
dc.subjectCapacitors
dc.subjectCircuit resonance
dc.subjectElectric network analysis
dc.subjectElectric network synthesis
dc.subjectGates (transistor)
dc.subjectIntegrated circuit layout
dc.subjectInsulated gate bipolar transistors (IGBT)
dc.subjectParasitic inductance
dc.subjectPower converters
dc.titleBusbar design considerations for high power IGBT converters
dc.typeConference Paper
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