Free charge carrier absorption in silicon at 800 nm

Heisel, P.-C. ; Ndebeka, W. I. ; Neethling, P. H. ; Paa, W. ; Rohwer, E. G. ; Steenkamp, C. M. ; Stafast, H. (2016)

CITATION: Heisel, P.-C. et al. 2016. Free charge carrier absorption in silicon at 800 nm. Applied Physics B, 122:60, doi:10.1007/s00340-015-6308-5.

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The transmission of a Ti:sapphire laser beam (c.w. and fs pulsed operation at 800 nm) through a 10-μm-thin oxidized silicon membrane at 45° angle of incidence at first increases with the incident laser power, then shows a maximum, and finally decreases considerably. This nonlinear transmission behavior is the same for c.w. and pulsed laser operation and mainly attributed to free charge carrier absorption (FCA) in Si. A simple FCA model is developed and tested.

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