Free charge carrier absorption in silicon at 800 nm

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dc.contributor.authorHeisel, P.-C.en_ZA
dc.contributor.authorNdebeka, W. I.en_ZA
dc.contributor.authorNeethling, P. H.en_ZA
dc.contributor.authorPaa, W.en_ZA
dc.contributor.authorRohwer, E. G.en_ZA
dc.contributor.authorSteenkamp, C. M.en_ZA
dc.contributor.authorStafast, H.en_ZA
dc.date.accessioned2020-03-03T13:44:32Z
dc.date.available2020-03-03T13:44:32Z
dc.date.issued2016
dc.descriptionCITATION: Heisel, P.-C. et al. 2016. Free charge carrier absorption in silicon at 800 nm. Applied Physics B, 122:60, doi:10.1007/s00340-015-6308-5.
dc.descriptionThe original publication is available at https://www.springer.com/journal/340
dc.description.abstractThe transmission of a Ti:sapphire laser beam (c.w. and fs pulsed operation at 800 nm) through a 10-μm-thin oxidized silicon membrane at 45° angle of incidence at first increases with the incident laser power, then shows a maximum, and finally decreases considerably. This nonlinear transmission behavior is the same for c.w. and pulsed laser operation and mainly attributed to free charge carrier absorption (FCA) in Si. A simple FCA model is developed and tested.en_ZA
dc.description.urihttps://link.springer.com/article/10.1007/s00340-015-6308-5
dc.description.versionPost-print
dc.format.extent7 pages
dc.identifier.citationHeisel, P.-C. et al. 2016. Free charge carrier absorption in silicon at 800 nm. Applied Physics B, 122:60, doi:10.1007/s00340-015-6308-5.
dc.identifier.issn1432-0649 (online)
dc.identifier.issn0946-2171 (print)
dc.identifier.otherdoi:10.1007/s00340-015-6308-5
dc.identifier.urihttp://hdl.handle.net/10019.1/107573
dc.language.isoen_ZAen_ZA
dc.publisherSpringer
dc.subjectPolarized beams (Nuclear physics)en_ZA
dc.subjectFree carrier absorptionen_ZA
dc.subjectLaser beamsen_ZA
dc.subjectMembranes, Silifcon -- Absorptionen_ZA
dc.subjectNonlinear opticsen_ZA
dc.titleFree charge carrier absorption in silicon at 800 nmen_ZA
dc.typeArticleen_ZA
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