Femtosecond laser diagnostics of the built-in electric field across the p<SUP>+</SUP>-Si/SiO<SUB>2 </SUB>interface and its ultrafast shielding
dc.contributor.author | Neethling PH | |
dc.contributor.author | Rohwer EG | |
dc.contributor.author | Stafast H | |
dc.date.accessioned | 2014-07-07T12:13:46Z | |
dc.date.available | 2014-07-07T12:13:46Z | |
dc.date.issued | 2013 | |
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dc.description | Journal Articles (subsidised) | |
dc.description | Natuurwetenskappe | |
dc.description | Fisika | |
dc.identifier.citation | Journal of Applied Physics | |
dc.identifier.citation | 113 | |
dc.identifier.uri | http://hdl.handle.net/10019.1/92375 | |
dc.publisher | AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE1 N O 1, MELVILLE, USA, NY, 11747-4501 | |
dc.title | Femtosecond laser diagnostics of the built-in electric field across the p<SUP>+</SUP>-Si/SiO<SUB>2 </SUB>interface and its ultrafast shielding |