Optical second harmonic generation as a probe for internal electric fields at the Si/SiO₂ interface

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dc.contributor.authorScheidt, T.en_ZA
dc.contributor.authorRohwer, E. G.en_ZA
dc.contributor.authorVon Bergmann, H. M.en_ZA
dc.date.accessioned2011-05-15T15:55:15Z
dc.date.available2011-05-15T15:55:15Z
dc.date.issued2005
dc.descriptionCITATION: Scheidt, T., Rohwer, E. G. & Von Bergmann, H. M. 2005. Optical second harmonic generation as a probe for internal electric fields at the Si/SiO₂ interface. South African Journal of Science, 101(1-2):91-92.
dc.descriptionThe original publication is available at https://journals.co.za
dc.description.abstractThe second harmonic signal generated in native Si/SiO₂ interfaces using femtosecond laser pulses (80 ± 5 fs, 10.5 nJ, 1.59 eV) is time dependent. The temporal evolution of the electric field-induced second harmonic signal (EFISH) shows a steady incline and subsequent saturation for incident laser peak intensities below ∼45 GW/cm2 due to electron injection and trapping as well as defect generation in the SiO₂ layer. We used second harmonic generation imaging to visualize defect sample areas. In contrast, a drastically different behaviour of the time-dependent SH response of Si/SiO₂ interfaces was observed for peak intensities above ∼45 GW/cm2. The SH signal rose to a maximum and showed a subsequent decline over many minutes. We suggest hole injection into the ultra-thin SiO₂ layer as an interpretation of this observation.
dc.description.urihttps://journals.co.za/content/sajsci/101/1-2/EJC96345
dc.description.versionPublisher's version
dc.format.extent2 pages
dc.identifier.citationScheidt, T., Rohwer, E. G. & Von Bergmann, H. M. 2005. Optical second harmonic generation as a probe for internal electric fields at the Si/SiO₂ interface. South African Journal of Science, 101(1-2):91-92
dc.identifier.issn382353
dc.identifier.issn1996-7489 (online)
dc.identifier.issn0038-2353 (print)
dc.identifier.urihttp://hdl.handle.net/10019.1/9671
dc.language.isoen_ZAen_ZA
dc.publisherAcademy of Science for South Africa
dc.rights.holderAcademy of Science for South Africa
dc.subjectElectric fields
dc.subjectSecond harmonic generation
dc.subjectLasers
dc.titleOptical second harmonic generation as a probe for internal electric fields at the Si/SiO₂ interfaceen_ZA
dc.typeArticle
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