Second harmonic generation as a technique to probe buried interfaces
| dc.contributor.author | Neethling, P. H. | en_ZA |
| dc.contributor.author | Scheldt, T. | en_ZA |
| dc.contributor.author | Rohwer, E. G. | en_ZA |
| dc.contributor.author | Von Bergmann, H. M. | en_ZA |
| dc.contributor.author | Stafast, H. | en_ZA |
| dc.date.accessioned | 2011-05-15T15:55:10Z | |
| dc.date.available | 2011-05-15T15:55:10Z | |
| dc.date.issued | 2009 | |
| dc.description | CITATION: Neethling, P. H., et al. 2009. Second harmonic generation as a technique to probe buried interfaces. South African Journal of Science, 105(7-8):828-284. | |
| dc.description | The original publication is available at http://archive.sajs.co.za | |
| dc.description.abstract | Since the advances of femtosecond laser technology during the last decade, optical second harmonic generation (SHG) has proven itself a powerful tool to investigate the electronic and structural properties of semiconductor materials. Its advantage lies in the fact that it is a contact-less, non-intrusive method that can be used in situ. It is sensitive to systems with broken symmetry, in particular interfaces and surfaces. The Si/SiO 2 system is technologically important since it forms a component of most modern electronic equipment. Furthermore, it has been shown that it is possible to induce an electric field across this Interface by means of laser irradiation as a result of defect formation and defect population. This electric field can be measured since it determines the SHG signal. The anisotropy of the SHG signal from the Sl/SiO 2 interface was measured and showed four-fold symmetry, illustrating that the SHG technique was able to characterise the electrical properties of the interface below the 5 nm thick oxide layer. | |
| dc.description.version | Publisher's version | |
| dc.format.extent | 3 pages | |
| dc.identifier.citation | Neethling, P. H., et al. 2009. Second harmonic generation as a technique to probe buried interfaces. South African Journal of Science, 105(7-8):828-284 | |
| dc.identifier.uri | http://hdl.handle.net/10019.1/9620 | |
| dc.language.iso | en_ZA | en_ZA |
| dc.publisher | Academy of Science for South Africa | |
| dc.rights.holder | Academy of Science for South Africa | |
| dc.subject | Second harmonic generation | |
| dc.subject | Electric fields | |
| dc.title | Second harmonic generation as a technique to probe buried interfaces | en_ZA |
| dc.type | Article |
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