First comparison of electric field induced second harmonic of NIR femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane
dc.contributor.author | Nyamuda, G. P. | en_ZA |
dc.contributor.author | Rohwer, E. G. | en_ZA |
dc.contributor.author | Steenkamp, C. M. | en_ZA |
dc.contributor.author | Stafast, H. | en_ZA |
dc.date.accessioned | 2011-10-13T16:58:47Z | |
dc.date.available | 2011-10-13T16:58:47Z | |
dc.date.issued | 2011 | |
dc.description | CITATION: Nyamuda, G. P. et al. 2011. First comparison of electric field induced second harmonic of near-infrared femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane. Applied Physics B, 104:735-740, doi:10.1007/s00340-011-4682-1. | |
dc.description | The original publication is available at https://link.springer.com/journal/340 | |
dc.description.abstract | For the first time electric field induced second harmonic (EFISH) generation of femtosecond (fs) laser pulses (λ=800 nm, τ=75±5 fs, rep. rate=80 MHz, Epulse≤10 nJ) is observed in transmission through a thin free-standing silicon (Si) membrane of 10-μm thickness and compared to the well-known EFISH results in reflection by use of the z-scan technique. EFISH in reflection and transmission unequivocally originate from the front and rear Si/SiO2 interfaces, respectively, with SiO2 being the natural oxide on the Si surfaces. Frequency conversion is enhanced by photoinduced electric fields across the Si/SiO2 interfaces caused by charge-carrier injection from Si into the oxide. The z-scan results and time-dependent measurements allow comparison of the EFISH signal amplitudes and time constants detected in transmission and reflection, demonstrating the need for further investigation. © 2011 Springer-Verlag. | en_ZA |
dc.description.version | Post-print | |
dc.format.extent | 16 pages | |
dc.identifier.citation | Nyamuda, G. P. et al. 2011. First comparison of electric field induced second harmonic of near-infrared femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane. Applied Physics B, 104:735-740, doi:10.1007/s00340-011-4682-1. | |
dc.identifier.issn | 0946-2171 (print) | |
dc.identifier.issn | 1432-0649 (online) | |
dc.identifier.other | doi:10.1007/s00340-011-4682-1 | |
dc.identifier.uri | http://hdl.handle.net/10019.1/16854 | |
dc.language.iso | en | |
dc.publisher | Springer | |
dc.subject | Second harmonic generation | en_ZA |
dc.subject | Near infrared reflectance spectroscopy | en_ZA |
dc.subject | Femtosecond lasers | en_ZA |
dc.subject | Laser pulses, Ultrashort | en_ZA |
dc.subject | Membranes, Silicon | en_ZA |
dc.title | First comparison of electric field induced second harmonic of NIR femtosecond laser pulses in reflection and transmission generated from Si/SiO2 interfaces of a silicon membrane | en_ZA |
dc.type | Article |
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