GaN FETs Non-Linear Model Constructed by Adaptive multi-bias S-parameter Measurements

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dc.contributor.authorXiao D
dc.contributor.authorSchreurs DMM-P
dc.contributor.authorVan Niekerk C
dc.contributor.authorDe Raedt W
dc.contributor.authorDerluyn J
dc.contributor.authorGermain M
dc.contributor.authorNauwelaars BKJC
dc.contributor.authorBorghs G
dc.date.accessioned2012-08-10T12:38:49Z
dc.date.available2012-08-10T12:38:49Z
dc.date.issued2005
dc.descriptionPlease help us populate SUNScholar with the post print version of this article. It can be e-mailed to: scholar@sun.ac.za
dc.descriptionIngenieurswese
dc.descriptionElektriese En Elektroniese Ingenie
dc.identifier.urihttp://hdl.handle.net/10019.1/37314
dc.titleGaN FETs Non-Linear Model Constructed by Adaptive multi-bias S-parameter Measurements
dc.typeProceedings International
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