Carrier lifetime in (HgCd)Te

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dc.contributor.authorSchildhauer, C.(Christian)
dc.contributor.otherStellenbosch University. Faculty of . Dept. of .
dc.date.accessioned2012-08-27T12:08:41Z
dc.date.available2012-08-27T12:08:41Z
dc.date.issued1986
dc.descriptionThesis (M.Sc.) -- University of Stellenbosch, 1986.
dc.descriptionFull text to be digitised and attached to bibliographic record.
dc.format.extent115 leaves : ill.
dc.identifier.urihttp://hdl.handle.net/10019.1/65077
dc.language.isoen_ZA
dc.publisherStellenbosch : Stellenbosch University
dc.rights.holderStellenbosch University
dc.subjectExcess carriers (Solid state physics)
dc.subjectAuger effect
dc.subjectPhotoconductivity
dc.subjectAlloys -- Effect of radiation on
dc.subjectHalf-life (Nuclear physics)
dc.subjectDissertations -- Physics
dc.titleCarrier lifetime in (HgCd)Te
dc.typeThesis
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