Busbar design considerations for high power IGBT converters
Date
1997
Authors
Beukes H.J.
Enslin J.H.R.
Spee R.
Journal Title
Journal ISSN
Volume Title
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Abstract
This paper addresses an important issue in the design and synthesis of high power IGBT converters, i.e. the layout and design of connection busbars. Parasitic inductance, caused by the physical distance current has to flow from the storage capacitors to the static switches and back, is the major constraint in developing a bus structure. This leads to non-ideal converter operation, namely voltage overshoot, voltage drop and resonance with snubber capacitors. By analyzing the currents and fields in and around busbars, parasitic inductance can be predicted and limited.
Description
Keywords
Bipolar transistors, Busbars, Capacitors, Circuit resonance, Electric network analysis, Electric network synthesis, Gates (transistor), Integrated circuit layout, Insulated gate bipolar transistors (IGBT), Parasitic inductance, Power converters
Citation
PESC Record - IEEE Annual Power Electronics Specialists Conference
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