A novel isolated, compensated Darlington based-drive configuration

Date
1992
Authors
Enslin J.H.R.
Hartman S.J.B.
Journal Title
Journal ISSN
Volume Title
Publisher
Publ by IEEE, Piscataway, NJ, United States
Abstract
An isolated version of the compensated base-drive for high power bipolar transistor switches is introduced. A unique pulse transformer is used to drive a high power bipolar transistor by means of a compensated Darlington pair, consisting of an IGBT driving transistor and a high current single bipolar transistor. In high efficiency, high power bridge applications of high current switches, the saturation voltage should be ultra-low, which implies a high power bipolar transistor in deep saturation. This isolated base-drive circuit is described and evaluated in these applications.
Description
Keywords
Electric Transformers, Mathematical Techniques--Numerical Analysis, Transistors, Bipolar, Waveform Analysis, Darlington Based Drive, Electric Switches, Semiconductor
Citation
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