An in situ tunable diode mounting topology for high-power X-band waveguide switches

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dc.contributor.authorSickel T.
dc.contributor.authorMeyer P.
dc.contributor.authorVan Der Walt P.W.
dc.date.accessioned2011-05-15T16:01:45Z
dc.date.available2011-05-15T16:01:45Z
dc.date.issued2007
dc.description.abstractAn in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode X -band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode X-band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power. © 2007 IEEE.
dc.description.versionArticle
dc.identifier.citationIEEE Transactions on Microwave Theory and Techniques
dc.identifier.citation55
dc.identifier.citation2
dc.identifier.issn189480
dc.identifier.other10.1109/TMTT.2006.889146
dc.identifier.urihttp://hdl.handle.net/10019.1/12132
dc.subjectBandwidth
dc.subjectDiodes
dc.subjectTopology
dc.subjectWaveguide components
dc.subjectDiode mount
dc.subjectEvanescent mode
dc.subjectWaveguide switch
dc.subjectX-band
dc.subjectSwitches
dc.titleAn in situ tunable diode mounting topology for high-power X-band waveguide switches
dc.typeArticle
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