An in situ tunable diode mounting topology for high-power X-band waveguide switches
Date
2007
Authors
Sickel T.
Meyer P.
Van Der Walt P.W.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode X -band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode X-band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power. © 2007 IEEE.
Description
Keywords
Bandwidth, Diodes, Topology, Waveguide components, Diode mount, Evanescent mode, Waveguide switch, X-band, Switches
Citation
IEEE Transactions on Microwave Theory and Techniques
55
2
55
2