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    • Low impedance characterisation and modeling of high power LDMOS devices 

      Malan, Pieter Jacob De Villiers (Stellenbosch : University of Stellenbosch, 2005-12)
      In RF power transistor characterisation, the designer is confronted with low impedance measurements (typically from 1 Ohm to 12 Ohm). These transistors are contained in metal-ceramic packages of which the lead widths ...