A novel isolated, compensated Darlington based-drive configuration
An isolated version of the compensated base-drive for high power bipolar transistor switches is introduced. A unique pulse transformer is used to drive a high power bipolar transistor by means of a compensated Darlington pair, consisting of an IGBT driving transistor and a high current single bipolar transistor. In high efficiency, high power bridge applications of high current switches, the saturation voltage should be ultra-low, which implies a high power bipolar transistor in deep saturation. This isolated base-drive circuit is described and evaluated in these applications.